features low cost diffused junction low leakage low forward voltage drop high current capability and similar solvents mechanical data case:jedec do-15,molded plastic terminals: axial lead ,solderable per mil- std-750,method 2026 polarity: color band denotes cathode weight: 0.14 ounces,0.39 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. 1s1835 units maximum recurrent peak reverse voltage v rrm 600 v max imum rms v olt age v rms 420 v maximum dc blocking voltage v dc 600 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 1.5 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. i fsm i f(av) 400 280 400 1.0 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. -55-----+150 -55-----+150 55 i r 10.0 12 a 100.0 350 1.2 60.0 a 1 s 1 8 3 4 (z) - - - 1 s 1 8 3 5 (z) d o - 1 5 easily cleaned with freon,alcohol,isopropanol voltage range: 400 --- 600 v current: 1.0 a f a st r e c o ve r y r e c t i f i er s the plastic material carries u/l recognition 94v-0 1S1834 dimensions in millimeters www.diode.kr diode semiconductor korea
.25 single phase half wave 60h z resistive or inductive load 25 0 50 75 .50 .75 1.00 1.25 1 2 5 1 0 0 1 5 0 1 7 5 1.5 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 2 4 10 100 t j =25 pulse width=300 1 s 1 8 3 4 (z) --- 1 s 1 83 5 (z) peak forward surge current notes: 1. rise time =7ns ma x. input impeda nce=1m .22pf fi g. 1 -- reverse recovery ti me characteri sti c and test ci rcui t di agram fi g. 2 --typi cal forward characteri sti c average forward rectified current set time base for 50/100 ns /cm .2 t j =25 f=1mhz 1 .1 2 4 .4 1 . 0 2 40 10 20 60 100 4 1 0 20 4 0 100 diode semiconductor korea www.diode.kr
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